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104 pcs
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104 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP145 is a silicon epitaxial-base PNP power transistor designed in a monolithic Darlington configuration. It is housed in a TO-218 plastic package, making it suitable for various power linear and switching applications.
Key electrical characteristics include a minimum DC current gain (hFE) of 1000 at IC = 5 A and VCE = 4 V, and a collector-emitter sustaining voltage (VCEO(sus)) of 60 Vdc minimum at 30 mA. The transistor is designed for general-purpose amplification and low-frequency switching tasks.
This component is part of the TIP Series of power transistors. Its construction includes a built-in base-emitter shunt resistor, contributing to its robust performance. The TO-218 package is commonly used for power applications requiring efficient heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) for the TIP145 is a minimum of 60 Vdc at 30 mA.
The TIP145 transistor has a minimum DC current gain (hFE) of 1000 when measured at IC = 5 A and VCE = 4 V.
The TIP145 transistor is supplied in a TO-218 plastic package.
The TIP145 transistor has a PNP polarity.