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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP142 is a complementary power Darlington transistor manufactured using planar technology with a monolithic Darlington configuration. This design results in exceptional high gain performance coupled with a very low saturation voltage.
Key electrical specifications include a collector-emitter voltage of 100V, a collector-base voltage of 100V, and an emitter-base voltage of 5V. The continuous collector current is rated at 10A, with a collector dissipation of 125W. The DC current gain (hfe) is listed as 1000, with an additional mention of HFE at 500, suggesting potential variations or different test conditions.
This transistor is housed in a TO-247-3 package and is designed for through-hole mounting. The operating and storage junction temperature range is from -65°C to +150°C. Its robust specifications make it suitable for applications in signal processing, power management, portable devices, consumer electronics, and industrial systems.
The TIP142 is often utilized in power amplifier circuits, capable of delivering significant RMS power output. Its NPN/PNP Darlington architecture provides strong reinforcement, making it a reliable component for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage of the TIP142 transistor is 100V.
The continuous collector current for the TIP142 is 10A.
The TIP142 transistor is supplied in a TO-247-3 package.
The operating and storage junction temperature range for the TIP142 is -65°C to +150°C.
The DC current gain (hfe) of the TIP142 is 1000.