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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120 pcs
|
120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
39 pcs
|
39 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The TIP141G from ON Semiconductor is a complementary silicon power transistor featuring a Darlington configuration. It is designed for general-purpose amplifier and low-frequency switching applications. This NPN transistor boasts a high DC current gain, with a minimum hFE of 1000 at 5.0 A and 4 V.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 80 Vdc, a continuous collector current (IC) of 10 Adc, and a maximum power dissipation (PD) of 125 W at 25°C. The saturation voltage (Vce Sat) is a maximum of 3 Vdc at 40mA base current and 10A collector current.
Packaged in a TO-247-3 through-hole configuration, the TIP141G operates within a junction temperature range of -65°C to 150°C. Its thermal resistance from junction to case is 1.0 °C/W, and from junction to ambient is 35.7 °C/W, facilitating effective heat management in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 80 Vdc.
The TIP141G is available in a TO-247-3 through-hole package.
The operating junction temperature range is -65°C to 150°C.
The minimum DC current gain (hFE) is 1000 at a collector current of 5 A and collector-emitter voltage of 4 V.
The maximum collector-emitter saturation voltage is 3 Vdc at a base current of 40 mA and collector current of 10 A.
The maximum power dissipation is 125 W at a case temperature of 25°C.
The thermal resistance from junction to case is 1.0 °C/W.