| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
70 pcs
|
70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Voltage | |
| Power Dissipation | |
| Storage Temperature | |
| Tape & Reel | |
| Thermal Resistance | |
| Turn Off Time | |
| Turn On Time |
The TIP141 is a bipolar silicon power Darlington transistor manufactured by NXP Semiconductors. It is designed for general purpose amplification and low-speed switching applications requiring high gain. The device supports collector-base voltages up to 60V, collector-emitter voltages up to 60V, and continuous collector currents of 10A. It features a power dissipation of 125W and operates within a junction temperature range of -65°C to +150°C. The package type is TO-218, suitable for through-hole mounting. Electrical characteristics include a saturation voltage of 2.0V at 5A collector current, a DC current gain (hFE) of approximately 1000, and a forward voltage of 2.8V at 10A. It complies with RoHS3, REACH, and has an MSL level of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-base voltage (V CBO) is 60 V.
The TIP141 is packaged in a TO-218 package.
Yes, the TIP141 is RoHS3 compliant.
The maximum collector current is 10A.
The junction temperature range is -65°C to +150°C.