| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,745 pcs
|
8745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,980 pcs
|
1980 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The STMicroelectronics TIP135 is a PNP Darlington transistor designed for general-purpose power amplification and switching applications. It features a high DC current gain of 1000 at 4A and a collector-emitter breakdown voltage of 60V.
This device is rated for a continuous collector current of 8A and a maximum power dissipation of 2W. The saturation voltage (Vce(sat)) is a maximum of 4V at 6A collector current and 30mA base current. It operates within a junction temperature range of -65°C to 150°C.
The TIP135 is packaged in a standard TO-220-3 configuration, suitable for through-hole mounting. Its robust design makes it suitable for various power control and amplification circuits where a high-gain, medium-power PNP transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V minimum.
TO-220-3 (through-hole).
150°C.
1000 at Ic=4A, Vce=4V.
4V at Ib=30mA, Ic=6A.
2W.
PNP Darlington.