| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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770 pcs
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770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Transistor Type |
The STMicroelectronics TIP132G is a high-performance NPN Darlington bipolar junction transistor (BJT). It is designed for applications requiring significant current handling capabilities, featuring a maximum collector current of 8A and a collector-emitter breakdown voltage of 100V.
This transistor offers a high DC current gain (hFE) of 1000 minimum at 4A and 4V, with a Vce saturation of 4V at 30mA and 6A. The maximum power dissipation is rated at 2W, and it operates at temperatures up to 150°C (TJ).
Packaged in a standard TO-220-3 configuration, the TIP132G is suitable for through-hole mounting. Its robust specifications make it a reliable choice for power switching and amplification circuits in various electronic designs.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. The part is supplied in a tube package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the TIP132G is 8A.
The collector-emitter breakdown voltage (Vceo) for the TIP132G is 100V.
The maximum power dissipation for the TIP132G is 2W.
The TIP132G can operate at temperatures up to 150°C (TJ).
The TIP132G is supplied in a TO-220-3 package.
The TIP132G is designed for through-hole mounting.