| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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554 pcs
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554 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The TIP132 is a silicon epitaxial-base NPN power transistor in a monolithic Darlington configuration, housed in a TO-220 plastic package. It is intended for use in power linear and switching industrial applications.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 60V and a continuous Collector Current (IC) of 8A. The device offers a high DC Current Gain (hFE) ranging from 1000 to 15000 at 4A. Its Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 2V at 4A.
Thermal characteristics are important for power applications. The TIP132 has a Total Power Dissipation of 70W at a case temperature of 25°C and 2W at an ambient temperature of 25°C. The thermal resistance from junction to case (Rthj-case) is 1.78°C/W.
This transistor is suitable for various industrial equipment requiring robust power handling capabilities in both linear and switching modes.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the TIP132 is 60V.
The continuous Collector Current (IC) rating for the TIP132 is 8A.
The DC Current Gain (hFE) of the TIP132 at 4A is between 1000 and 15000.
The TIP132 transistor comes in a TO-220 package.