| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28 pcs
|
28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Spacing | |
| Mounting Type | |
| Power Dissipation | |
| Storage Temperature | |
| Tape & Reel |
The TIP126 is a silicon Epitaxial-Base power transistor in a monolithic Darlington configuration, manufactured by Samsung Electronics. It is housed in a TO-220 plastic package, making it suitable for through-hole mounting.
This PNP transistor is designed for power linear and switching applications. Key electrical characteristics include a high DC current gain (hFE) of 2500 typical at 4.0 Adc, a collector-emitter sustaining voltage (Vce(sus)) of 80 Vdc minimum at 100 mAdc, and a low collector-emitter saturation voltage (Vce(sat)) of 2.0 Vdc maximum at 3.0 Adc and 4.0 Vdc maximum at 5.0 Adc.
Other specifications include a power dissipation (Pd) of 65 mW and collector current (Ic) of 5 mA. The TIP126 is an equivalent or alternate to parts such as TIP100, TIP101, TIP102, TIP105, TIP106, TIP107, TIP110, and TIP121.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage is 80 Vdc minimum at 100 mAdc.
The typical DC current gain (hFE) is 2500 at 4.0 Adc.
The collector-emitter saturation voltage is 2.0 Vdc maximum at 3.0 Adc.
The TIP126 is available in a TO-220 plastic package.
The TIP126 is intended for use in power linear and switching applications.