| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor TIP125TU is a PNP Darlington bipolar junction transistor (BJT) housed in a TO-220-3 package. This component is designed for power applications, featuring a maximum collector current of 5A and a collector-emitter voltage of 60V.
With a high DC current gain (hFE) of 1000 at 3A and 3V, and a saturation voltage (Vce(sat)) of 4V at 20mA and 5A, the TIP125TU is suitable for various switching and amplification tasks. It operates within a junction temperature range of -65°C to 150°C.
The through-hole mounting type simplifies integration into circuit boards. This transistor is often used in power supply circuits, motor control, and general-purpose amplification where high current gain is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The TIP125TU transistor has a maximum collector-emitter voltage rating of 60V.
The TIP125TU can handle a maximum continuous collector current of 5A.
The TIP125TU has a minimum DC current gain (hFE) of 1000, specified at 3A collector current and 3V collector-emitter voltage.
The TIP125TU transistor operates within a junction temperature range of -65°C to 150°C.
The TIP125TU is supplied in a TO-220-3 package.
The TIP125TU transistor is designed for through-hole mounting.