Mfr Part #:

TIP125

The TIP125 is a PNP Epitaxial Darlington Transistor from STMicroelectronics. It is designed for medium power linear and switching applications.

✓ Total Stock: 5,384 pcs

$ Price Range: $1.17

TIP125 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	5,370 pcs On Request	5370 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Partservice ✓ Non-Authorised Inventory information	13 pcs On Request	13 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Hybrid Electronics ✓ Non-Authorised Inventory information	1 pcs On Request	1 pcs	On Request	1	On Request	On Request	450	On Request	On Request

TIP125 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	STMicroelectronics
Junction Temperature	150°C
Mounting Type	Through Hole
Storage Temperature	°C ~ °C
Tape & Reel	No
Type	PNP Epitaxial Darlington Transistor

View Similar Products (0)

TIP125 Description

Short technical summary and product information.

The TIP125 is a PNP Epitaxial Darlington Transistor manufactured by STMicroelectronics. It is suitable for medium power linear and switching applications. This transistor features a collector-emitter voltage of up to 60V and a continuous collector current of 5A.

The TIP125 is complementary to the TIP120, TIP121, and TIP122 series. It comes in a TO-220 package, which is a common through-hole mounting type.

Key electrical characteristics include a DC current gain (hFE) of 1000 at VCE = -3V and IC = 0.5A. The collector-emitter saturation voltage (VCE(sat)) is a maximum of -2V at IC = -3A and IB = -12mA. The base-emitter ON voltage (VBE(on)) is typically -2.5V at VCE = -3V and IC = -3A. The output capacitance (Cob) is 300pF at VCB = -10V, IE = 0, and f = 0.1MHz.

Absolute maximum ratings include a collector-emitter voltage of -60V, a collector current of 5A, and a junction temperature of 150°C. Power dissipation is rated at 2W at an ambient temperature of 25°C and 65W at a case temperature of 25°C.

TIP125 Quick Information

Product Type: PNP Epitaxial Darlington Transistor

Canonical Name: TIP125 PNP Epitaxial Darlington Transistor

Subcategory: Bipolar (BJT) - Single, Pre-Biased

TIP125 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TIP125 Estimated Pricing

Qty	Low	High
1+	$1.17	$1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

TIP125 Features

PNP Epitaxial Darlington Transistor.
60V collector-emitter voltage rating.
5A continuous collector current.
TO-220 through-hole package.
Complementary to TIP120/121/122.

TIP125 Applications

Medium power linear applications.
Medium power switching applications.
General purpose amplification circuits.
Power control circuits.

TIP125 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the collector-emitter voltage of the TIP125 transistor?

The collector-emitter voltage (VCEO) for the TIP125 is -60V.

What is the maximum continuous collector current for the TIP125?

The maximum continuous collector current (IC) for the TIP125 is 5A.

What package type is the TIP125 transistor supplied in?

The TIP125 transistor is supplied in a TO-220 package.

What is the typical DC current gain (hFE) of the TIP125?

The typical DC current gain (hFE) of the TIP125 is 1000 at VCE = -3V and IC = 0.5A.

What is the maximum collector-emitter saturation voltage for the TIP125?

The maximum collector-emitter saturation voltage (VCE(sat)) for the TIP125 is -2V at IC = -3A and IB = -12mA.