| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,777 pcs
|
8777 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP125 is a PNP Darlington bipolar junction transistor manufactured by NTE Electronics. It is designed for use in various electronic circuits requiring amplification or switching capabilities.
Key electrical characteristics include a collector-emitter breakdown voltage of 60V and a continuous collector current rating of 500mA. The transistor exhibits a high DC current gain (hFE) of 1000 at 3A and 3V, with a Vce saturation of 4V maximum at 20mA base current and 5A collector current. Its transition frequency (fT) is 4MHz.
This component is housed in a TO-220-3 package, suitable for through-hole mounting. The operating temperature range is from -65°C to 150°C (TJ), making it suitable for a wide array of environmental conditions.
The TIP125 is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. Its through-hole mounting type facilitates easy integration into PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The TIP125 transistor has a collector-emitter breakdown voltage of 60V.
The continuous collector current for the TIP125 is 500µA.
The DC current gain (hFE) of the TIP125 is a minimum of 1000 at 3A collector current and 3V collector-emitter voltage.
The operating temperature range for the TIP125 is -65°C to 150°C (TJ).
The TIP125 transistor comes in a TO-220-3 package.
The TIP125 transistor is designed for through-hole mounting.