| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,070 pcs
|
8070 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
506 pcs
|
506 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
97 pcs
|
97 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The TIP122G from ON Semiconductor is a complementary silicon power transistor featuring a monolithic construction with built-in base-emitter shunt resistors. This NPN Darlington transistor is designed for general-purpose amplifier and low-speed switching applications.
Key electrical characteristics include a collector-emitter sustaining voltage of 100V (VCEO(sus)) and a continuous collector current rating of 5A. It offers a high DC current gain (hFE) of 1000 (min) at 3A and 3V, with a typical gain of 2500 at 4A. The saturation voltage (VCE(sat)) is a maximum of 4V at 20mA base current and 5A collector current.
This device is housed in a TO-220AB package, suitable for through-hole mounting. It has a maximum power dissipation of 65W at 25°C case temperature and 2W at 25°C ambient temperature. The operating and storage junction temperature range is -65°C to +150°C.
The TIP122G is available in Pb-free packages, aligning with environmental considerations for modern electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) is 100 V minimum at IC = 100 mA.
The maximum continuous collector current (IC) is 5 A.
The minimum hFE is 1000 at IC = 3 A, VCE = 3 V.
The TIP122G is available in a TO-220-3 (TO-220AB) through-hole package.
The operating junction temperature range is -65°C to +150°C.
The maximum VCE(sat) is 4 V at IC = 5 A, IB = 20 mA.
The total power dissipation is 65 W at TC = 25°C, with derating above 25°C.