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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,750 pcs
|
8750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current (Maximum) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature (Minimum/Maximum) | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage - Maximum | |
| current (Maximum @ Peak) | |
| gain (Typical @ IC = 4.0 Adc) | |
| voltage (Maximum @ IC = 3.0 Adc) | |
| voltage (Maximum @ IC = 5.0 Adc) | |
| voltage (Maximum @ Ib = 20 mA, Ic = 5 A) |
The TIP121G from On Semiconductor is a complementary silicon power transistor featuring a monolithic construction with built-in base-emitter shunt resistors. This NPN Darlington transistor is designed for general-purpose amplifier and low-speed switching applications.
Key electrical specifications include a collector-emitter sustaining voltage (VCEO(sus)) of 80V, a continuous collector current of 5A, and a peak collector current of 8A. It offers a high DC current gain (hFE) typically 2500 at 4.0 Adc, and a minimum gain of 1000 at 3A, 3V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 2.0V at 3.0 Adc and 4.0V at 5.0 Adc.
This device is housed in a TO-220-3 package and is suitable for through-hole mounting. It operates within a junction temperature range of -65°C to 150°C. The datasheet indicates Pb-Free packages are available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) is 80 Vdc minimum.
The continuous collector current is 5 Adc.
The TIP121G is available in a TO-220-3 through-hole package.
The operating junction temperature range is -65°C to 150°C.
The typical DC current gain (hFE) is 2500 at IC = 4.0 Adc.
The maximum power dissipation is 65 W at case temperature 25°C and 2 W at ambient temperature 25°C.