| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation | |
| Storage Temperature | |
| Tape & Reel |
The TIP121 is a silicon Epitaxial-Base NPN power transistor featuring a monolithic Darlington configuration. It is housed in a standard Jedec TO-220 plastic package, making it suitable for through-hole mounting.
This transistor is engineered for power linear and switching applications, offering a collector current capability of up to 5A and a collector-emitter voltage of 80V. It has a typical power dissipation of 65mW and a high current gain (hFE) of 1000 at 500mA.
Key specifications include a maximum collector current of 5A and a maximum collector-emitter voltage of 80V. The TIP121 is a complementary silicon transistor, suitable for various power applications where robust performance is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the TIP121 transistor is 5A.
The maximum collector-emitter voltage for the TIP121 transistor is 80V.
The TIP121 transistor is supplied in a TO-220 package.
The typical hFE of the TIP121 transistor at 500mA is 1000.