| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,467 pcs
|
2467 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
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The TIP115 is a PNP bipolar junction transistor (BJT) from On Semiconductor, featuring a monolithic Darlington configuration. It is designed for general-purpose amplifier and low-speed switching applications. Key electrical characteristics include a collector-emitter sustaining voltage (VCEO(sus)) of 60V and a continuous collector current (IC) of 2A.
This transistor boasts a high DC current gain (hFE) ranging from 500 to 1000 at specified test conditions (IC=2A, VCE=4V and IC=1A, VCE=4V respectively). The collector-emitter saturation voltage (VCE(sat)) is a maximum of 2.5V at IC=2A and IB=8mA. The device operates within a junction temperature range of -65°C to +150°C and has a total power dissipation of 50W at 25°C.
The TIP115 is housed in a TO-220-3 package, suitable for through-hole mounting. Its construction includes a built-in base-emitter shunt resistor, contributing to its reliability in medium power linear and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The TIP115 has a maximum collector-emitter voltage (Vceo) of 60V.
The TIP115 is available in a TO-220-3 through-hole package.
The operating junction temperature range is -65°C to +150°C.
The minimum hFE is 1000 at IC=1A, VCE=4V, and 500 at IC=2A, VCE=4V.
Continuous collector current is 2A, peak current is 4A.
Maximum power dissipation is 50W at case temperature 25°C, derating 0.4W/°C above 25°C.
Thermal resistance from junction to case is 2.5°C/W maximum.