| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP115 from NTE Electronics is a PNP Darlington transistor housed in a TO-220 package. It is engineered for general-purpose amplifier and low-speed switching applications. This transistor offers a collector-emitter sustaining voltage of 60V and a continuous collector current of up to 2A.
Key electrical characteristics include a high DC current gain (hFE) of 1000 at 1A and a low collector-emitter saturation voltage (VCE(sat)) of 2.5V at 2A. The device operates within a wide temperature range of -65°C to 150°C.
With its monolithic construction and built-in base-emitter shunt resistor, the TIP115 provides reliable performance in various electronic circuits. Its through-hole mounting type makes it suitable for traditional PCB assembly.
This power transistor is designed for medium power linear and switching applications, making it a versatile component for industrial use and general-purpose amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is 60V maximum.
The TIP115 is available in a TO-220-3 through-hole package.
The operating and storage junction temperature range is -65°C to 150°C.
Minimum DC current gain is 1000 at IC=1A, VCE=4V, and 500 at IC=2A, VCE=4V.
Continuous collector current is 2A maximum, with a peak current of 4A.
Total power dissipation is 50W at case temperature 25°C, derating 0.4W/°C above 25°C.
Maximum collector-emitter saturation voltage is 2.5V at IC=2A, IB=8mA.