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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP115 is a silicon Epitaxial-Base PNP transistor featuring a monolithic Darlington configuration, housed in a standard TO-220 plastic package. This component is engineered for medium power linear and switching applications. It boasts a high DC current gain (hFE) of a minimum of 1000 at VCE = -4V and IC = -1A, making it suitable for amplification tasks. The transistor also offers a low collector-emitter saturation voltage. Its construction includes built-in base-emitter shunt resistors for enhanced performance. The TIP115 is intended for industrial use and general-purpose amplification circuits.
Key electrical specifications include a maximum collector current of 2A and a maximum collector-emitter voltage of 60V. Power dissipation is rated at 50W. The TO-220 package is designed for through-hole mounting, facilitating integration into printed circuit boards. This transistor is a reliable choice for various electronic projects requiring robust amplification and switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum DC current gain (hFE) for the TIP115 is 1000 at VCE = -4V and IC = -1A.
The maximum collector current (Ic) for the TIP115 is 2A.
The maximum collector-emitter voltage (Vce) for the TIP115 is 60V.
The TIP115 transistor is supplied in a TO-220 plastic package.
The TIP115 is a PNP Power Darlington Transistor.