| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type |
The TIP115 is a silicon Epitaxial-Base PNP transistor in a monolithic Darlington configuration, manufactured by ON Semiconductor. It is designed for medium power linear and switching applications.
Key electrical specifications include a high DC current gain (hFE) of a minimum of 1000 at VCE = -4V and IC = -1A. The maximum collector-emitter voltage (Vce) is 60V, and the collector-base voltage (VCB) is also 60V. The maximum power dissipation (Pd) is 50W.
This transistor is mounted in a standard Jedec TO-220 plastic package, suitable for through-hole mounting. Its monolithic construction includes built-in base-emitter shunt resistors for enhanced reliability.
The TIP115 is an equivalent or alternate for several other TIP series transistors, making it a versatile component for various industrial uses.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.94 | $1.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum DC current gain (hFE) for the TIP115 is 1000 at VCE = -4V and IC = -1A.
The maximum collector-emitter voltage (Vce) for the TIP115 is 60V.
The TIP115 transistor comes in a TO-220 plastic package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.