TIP112G The ON Semiconductor TIP112G is an NPN Darlington transistor designed for general-purpose amplifier and low-speed switching applications. It offers a 100V collector-emitter voltage and 2A continuous current.
Mfr Part #:

TIP112G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor TIP112G is an NPN Darlington transistor designed for general-purpose amplifier and low-speed switching applications. It offers a 100V collector-emitter voltage and 2A continuous current.
Total Stock: 2,781 pcs
$ Price Range: $0.51

TIP112G Available from 3 distributors

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1,930 pcs
1930 pcs On Request 1 On Request On Request On Request On Request On Request
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800 pcs
800 pcs On Request 1 On Request On Request On Request On Request On Request
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51 pcs
51 pcs On Request 1 On Request On Request 845 On Request On Request

TIP112G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current (Maximum)
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TC=25 °C)
Supplier Device Package
Thermal Resistance (Maximum @ Junction to case)
Thermal Resistance (Maximum @ Junction-to-Ambient)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ Peak)
gain (Minimum @ IC = 1 A, Vce = 4 V)
voltage (Minimum @ VCEO(sus)

TIP112G Description

Short technical summary and product information.

The TIP112G from ON Semiconductor is a complementary silicon power transistor featuring a monolithic construction with built-in base-emitter shunt resistors. This NPN Darlington transistor is designed for general-purpose amplifier and low-speed switching applications.

 

Key electrical characteristics include a collector-emitter sustaining voltage of 100 Vdc, a continuous collector current of 2 A, and a peak collector current of 4 A. It boasts a high DC current gain (hFE) of 1000 (min) at 1A, 4V, and a low collector-emitter saturation voltage of 2.5 Vdc (max) at 8mA, 2A. The device can dissipate up to 50 W at 25°C case temperature or 2 W at 25°C ambient temperature.

 

Packaged in a TO-220-3 configuration, the TIP112G is designed for through-hole mounting. It operates within a junction temperature range of -65°C to 150°C. The thermal resistance from junction to case is 2.5°C/W, and from junction to ambient is 62.5°C/W.

TIP112G Quick Information

Product Type: NPN Darlington Transistor
Canonical Name: TIP112G NPN Darlington Power Transistor
Subcategory: NPN Darlington

TIP112G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TIP112G Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

TIP112G Features

  • NPN Darlington transistor for amplification.
  • 100V collector-emitter voltage rating.
  • 2A continuous collector current.
  • High DC current gain (hFE).
  • TO-220 package with through-hole mounting.

TIP112G Applications

  • General-purpose amplifier circuits.
  • Low-speed switching applications.
  • Power supply regulation circuits.
  • Motor control applications.

TIP112G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the TIP112G?

The collector-emitter sustaining voltage (VCEO(sus)) is 100 Vdc.

What is the continuous collector current rating of the TIP112G?

The continuous collector current rating is 2 Adc.

What is the power dissipation of the TIP112G?

The maximum power dissipation is 50 W at a case temperature of 25°C, and 2 W at an ambient temperature of 25°C.

What is the operating temperature range for the TIP112G?

The operating junction temperature range is -65°C to 150°C.

What package does the TIP112G come in?

The TIP112G is available in a TO-220-3 through-hole package.

What is the DC current gain (hFE) of the TIP112G?

The minimum DC current gain is 1000 at IC = 1A and Vce = 4V, with a typical value of 2500.

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