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457 pcs
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457 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP112 is a silicon epitaxial-base NPN transistor in a monolithic Darlington configuration, manufactured by CJ. It is designed for linear and switching applications requiring moderate power.
Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 100V and a continuous collector current (Ic) of 2A. The transistor utilizes a silicon element material and is configured in a Darlington setup for high current gain.
This component is supplied in a TO-220-3 package, suitable for through-hole mounting. The TIP112 is complementary to PNP types TIP115 and TIP117. Its robust construction and electrical characteristics make it a reliable choice for various power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the TIP112 is 100V.
The TIP112 has a continuous collector current rating of 2A.
The TIP112 is an NPN Darlington transistor.
The TIP112 is supplied in a TO-220-3 package.
The TIP112 is designed for through-hole mounting.
The factory lead time for the TIP112 is 8 weeks.