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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,900 pcs
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10900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5,036 pcs
|
5036 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
32 pcs
|
32 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP112 from STMicroelectronics is a monolithic Darlington silicon epitaxial-based NPN transistor housed in a TO-220 plastic package. It is engineered for applications requiring moderate power, functioning effectively in both linear and switching roles.
Key electrical specifications include a maximum voltage rating of 100V and a continuous current capability of 2A. It boasts a high DC current gain (hFE) of 1000 at 1A and 4V, with a Vce saturation of 2.5V at 8mA and 2A. The transistor can dissipate up to 2W of power and operates within a temperature range of -65°C to 150°C (TJ).
Designed for Through Hole mounting, the TIP112 is suitable for integration into various electronic circuits. Its TO-220-3 package provides a robust housing for the silicon transistor element. Complementary PNP types include TIP115 and TIP117.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum voltage for the TIP112 transistor is 100V.
The TIP112 transistor has a continuous current rating of 2A.
The TIP112 transistor has a power dissipation of 2W.
The DC current gain (hFE) of the TIP112 transistor is a minimum of 1000 at 1A and 4V.
The operating temperature for the TIP112 transistor is up to 150°C (TJ).
The TIP112 is an NPN Darlington transistor.
The TIP112 transistor is supplied in a TO-220-3 package.