TIP111G The TIP111G is an NPN Darlington transistor from ON Semiconductor, designed for general-purpose amplifier and low-speed switching applications. It features an 80V collector-emitter voltage and 2A continuous collector current.
Mfr Part #:

TIP111G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The TIP111G is an NPN Darlington transistor from ON Semiconductor, designed for general-purpose amplifier and low-speed switching applications. It features an 80V collector-emitter voltage and 2A continuous collector current.
Total Stock: 6,288 pcs
$ Price Range: $0.51

TIP111G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,250 pcs
6250 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
38 pcs
38 pcs On Request 1 On Request On Request On Request On Request On Request

TIP111G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current (Maximum)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Thermal Resistance (Maximum @ Junction to case)
Thermal Resistance (Maximum @ Junction-to-Ambient)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ Peak)
gain (Minimum @ IC = 1 A, Vce = 4 V)
voltage (Maximum @ Vce(sat) @ Ic = 2.0 Adc)

TIP111G Description

Short technical summary and product information.

The TIP111G is a complementary silicon power transistor manufactured by ON Semiconductor. It is designed for general-purpose amplifier and low-speed switching applications. This NPN Darlington transistor offers a high DC current gain and a collector-emitter sustaining voltage of 80V.

 

Key electrical characteristics include a continuous collector current of 2A and a peak collector current of 4A. The collector-emitter saturation voltage is a maximum of 2.5V at 2A collector current. The device has a high DC current gain (hFE) of 1000 minimum at 1A collector current and 4V collector-emitter voltage, with a typical gain of 2500 at 1.0 Adc.

 

With a total power dissipation of 50W at 25°C case temperature, the TIP111G is suitable for various power applications. It is housed in a TO-220-3 package, designed for through-hole mounting. The operating temperature range is from -65°C to 150°C junction temperature.

 

This transistor is built with monolithic construction and includes built-in base-emitter shunt resistors. It is available in Pb-Free packages.

TIP111G Quick Information

Product Type: NPN Darlington Transistor
Series: Tip110
Canonical Name: TIP111G NPN Darlington Power Transistor
Subcategory: Darlington Transistor

TIP111G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TIP111G Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

TIP111G Features

  • NPN Darlington power transistor.
  • 80V collector-emitter voltage rating.
  • 2A continuous collector current.
  • High DC current gain.
  • TO-220 through-hole package.

TIP111G Applications

  • General-purpose amplifier circuits.
  • Low-speed switching applications.
  • Power supply regulation.
  • Motor control circuits.

TIP111G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the TIP111G?

The maximum collector-emitter voltage is 80 Vdc.

What is the package type of the TIP111G?

The package is TO-220-3, through-hole mounting, with supplier device package TO-220.

What is the operating temperature range of the TIP111G?

The operating junction temperature range is -65°C to 150°C.

What is the DC current gain (hFE) of the TIP111G?

The typical DC current gain is 2500 at 1 A collector current, with a minimum of 1000 at 1 A and 4 V.

What is the power dissipation rating of the TIP111G?

The maximum power dissipation is 50 W at case temperature 25°C and 2 W at ambient temperature 25°C.

What is the collector-emitter saturation voltage of the TIP111G?

The maximum saturation voltage is 2.5 Vdc at 2 A collector current and 8 mA base current.

What is the thermal resistance of the TIP111G?

The thermal resistance is 2.5 °C/W junction-to-case and 62.5 °C/W junction-to-ambient.

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