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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,250 pcs
|
6250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
38 pcs
|
38 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current (Maximum) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Supplier Device Package | |
| Thermal Resistance (Maximum @ Junction to case) | |
| Thermal Resistance (Maximum @ Junction-to-Ambient) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| current (Maximum @ Peak) | |
| gain (Minimum @ IC = 1 A, Vce = 4 V) | |
| voltage (Maximum @ Vce(sat) @ Ic = 2.0 Adc) |
The TIP111G is a complementary silicon power transistor manufactured by ON Semiconductor. It is designed for general-purpose amplifier and low-speed switching applications. This NPN Darlington transistor offers a high DC current gain and a collector-emitter sustaining voltage of 80V.
Key electrical characteristics include a continuous collector current of 2A and a peak collector current of 4A. The collector-emitter saturation voltage is a maximum of 2.5V at 2A collector current. The device has a high DC current gain (hFE) of 1000 minimum at 1A collector current and 4V collector-emitter voltage, with a typical gain of 2500 at 1.0 Adc.
With a total power dissipation of 50W at 25°C case temperature, the TIP111G is suitable for various power applications. It is housed in a TO-220-3 package, designed for through-hole mounting. The operating temperature range is from -65°C to 150°C junction temperature.
This transistor is built with monolithic construction and includes built-in base-emitter shunt resistors. It is available in Pb-Free packages.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 80 Vdc.
The package is TO-220-3, through-hole mounting, with supplier device package TO-220.
The operating junction temperature range is -65°C to 150°C.
The typical DC current gain is 2500 at 1 A collector current, with a minimum of 1000 at 1 A and 4 V.
The maximum power dissipation is 50 W at case temperature 25°C and 2 W at ambient temperature 25°C.
The maximum saturation voltage is 2.5 Vdc at 2 A collector current and 8 mA base current.
The thermal resistance is 2.5 °C/W junction-to-case and 62.5 °C/W junction-to-ambient.