| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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577 pcs
|
577 pcs | On Request | 10 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The ON Semiconductor TIP110TU is a high-gain NPN Darlington transistor suitable for various power switching and amplification applications. It is rated for a maximum collector-emitter voltage of 60V and can handle a continuous collector current of up to 2A.
This transistor offers a significant DC current gain (hFE) of 1000 at 1A, making it ideal for applications requiring high amplification. The Vce saturation voltage is a maximum of 2.5V at 8mA base current and 2A collector current. It operates within a temperature range of -55°C to 150°C (TJ).
The TIP110TU is packaged in a standard TO-220-3 configuration, facilitating through-hole mounting on printed circuit boards. Its robust construction and electrical characteristics make it a reliable choice for power control circuits and general-purpose amplification tasks where high current gain is essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60V.
The maximum continuous collector current is 2A.
The maximum power dissipation is 2W.
The minimum DC current gain is 1000 at 1A collector current and 4V collector-emitter voltage.
The TIP110TU is supplied in a TO-220-3 through-hole package.
The maximum operating junction temperature is 150°C.