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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIP102TU from ON Semiconductor is a single NPN Darlington bipolar junction transistor (BJT). It is designed for applications requiring high current gain and power handling capabilities.
Key electrical specifications include a collector-emitter breakdown voltage of 100V and a continuous collector current rating of 8A. The transistor features a high DC current gain (hFE) of 1000 at 3A, 4V, and a Vce saturation of 2.5V maximum at 80mA, 8A. It has a power dissipation rating of 2W.
This component operates within a temperature range of -55°C to 150°C (TJ). It is packaged in a TO-220-3 configuration, suitable for through-hole mounting.
The TIP102TU is part of ON Semiconductor's discrete semiconductor product line, specifically within the single BJT category.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating junction temperature (TJ) for the TIP102TU is 150°C.
The TIP102TU transistor comes in a TO-220-3 package.
The TIP102TU can handle a continuous collector current of 8A.
The collector-emitter breakdown voltage for the TIP102TU is 100V.
The TIP102TU is an NPN Darlington transistor.