| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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380 pcs
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380 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| SVHC Present | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The TIP101G from ON Semiconductor is an NPN Silicon Darlington Transistor designed for general-purpose amplifier and low-speed switching applications. This device offers a high DC current gain, with a typical value of 2500 at 4.0 Adc, and a minimum gain of 1000 at 3A, 4V.
Key electrical characteristics include a collector-emitter sustaining voltage of 80V (VCEO(sus)) and a continuous collector current rating of 8A. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 2.5V at 8.0 Adc. The transistor is constructed monolithically with built-in base-emitter shunt resistors.
Packaged in a TO-220-3 configuration, the TIP101G is suitable for through-hole mounting. It operates within a junction temperature range of -65°C to +150°C. The device is RoHS compliant and Pb-Free.
This transistor is well-suited for applications requiring high current gain and moderate power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) is 80V minimum.
The operating and storage junction temperature range is -65°C to +150°C.
The TIP101G is available in a TO-220-3 through-hole package.
The continuous collector current rating is 8A maximum.
The collector-emitter saturation voltage is 2V maximum at 3A collector current.
The typical DC current gain is 2500 at 4A collector current.
The maximum power dissipation is 80W at case temperature 25°C.