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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 8C1A | On Request | On Request |
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The TIM4450-4UL from Toshiba is a high-performance Microwave Power GaAs FET designed for broadband applications. It features an internally matched design for ease of use and a hermetically sealed package for reliability.
Key electrical specifications include a typical output power of 36.5 dBm at 1dB gain compression and a typical power gain of 11.0 dB, both measured across the 4.4 to 5.0 GHz frequency band. The device also exhibits low intermodulation distortion, with a minimum IM3 of -44 dBc at a Pout of 25.5 dBm.
With a typical power added efficiency of 37%, the TIM4450-4UL is suitable for applications requiring efficient power amplification. The FET operates with a drain-source voltage of 10V and a set drain current of 0.9A for its primary RF performance characteristics.
The device is housed in a 2-11D1B package, designed for surface mount applications. Absolute maximum ratings include a drain-source voltage of 15V and a total power dissipation of 25W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.32 | $1.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
15 V.
2-11D1B surface mount.
36.5 dBm typical at VDS=10V, IDSset=0.9A, 4.4-5 GHz.
11 dB typical.
37% typical.
-44 dBc minimum.
80 °C maximum.