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TIM4450-4 The Toshiba TIM4450-4 is an N-Channel RF Power MOSFET designed for C BAND applications. It offers a breakdown voltage of 15V and a maximum drain current of 4A.
Mfr Part #:

TIM4450-4

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TIM4450-4 is an N-Channel RF Power MOSFET designed for C BAND applications. It offers a breakdown voltage of 15V and a maximum drain current of 4A.
✓ Total Stock: 11 pcs
$ Price Range: $2.81

TIM4450-4 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
Non-Authorised Inventory information
11 pcs
On Request
11 pcs On Request 1 On Request On Request On Request On Request On Request
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TIM4450-4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Mounting Type
Operating Mode
SVHC Present
Transistor Type
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TIM4450-4 Description

Short technical summary and product information.

The Toshiba TIM4450-4 is an RF Power MOSFET featuring an N-Channel configuration and Metal-Oxide Semiconductor FET technology. It operates in the C BAND frequency range and is constructed with Gallium Arsenide for optimal performance.

 

Key electrical specifications include a minimum breakdown voltage of 15V and a maximum drain current (ID) of 4A. The device operates in DEPLETION mode.

 

Packaged in a ceramic, metal-sealed, cofired rectangular housing with a flange mount style, this surface-mount MOSFET is suitable for various RF power applications. The terminal form is FLAT and the terminal position is DUAL.

TIM4450-4 Quick Information

Product Type: RF Power MOSFET
Canonical Name: TIM4450-4 C BAND GaAs N-CHANNEL RF POWER MOSFET
Subcategory: RF Power MOSFET

TIM4450-4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TIM4450-4 Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

TIM4450-4 Features

  • N-Channel RF Power MOSFET
  • C BAND frequency operation
  • 15V minimum breakdown voltage
  • 4A maximum drain current
  • Flange mount package

TIM4450-4 Applications

  • Used in C-band RF power amplifiers.
  • Suitable for satellite communication systems.
  • Ideal for radar transmitter stages.
  • Applied in wireless infrastructure equipment.
  • Designed for high-frequency power amplification.

TIM4450-4 FAQs

11 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the TIM4450-4?

The minimum breakdown voltage is 15 V.

What is the maximum drain current for the TIM4450-4?

The maximum drain current (ID) is 4 A.

What frequency band does the TIM4450-4 operate in?

The highest frequency band is C BAND.

What type of FET technology does the TIM4450-4 use?

It uses METAL-OXIDE SEMICONDUCTOR FET technology.

What is the transistor type of the TIM4450-4?

The transistor type is RF POWER.

What is the channel type of the TIM4450-4 MOSFET?

The channel type is N-CHANNEL.

What is the operating mode of the TIM4450-4?

The operating mode is DEPLETION.

What material is the transistor element of the TIM4450-4 made from?

The transistor element material is GALLIUM ARSENIDE.

What is the package case description for the TIM4450-4?

The manufacturer package description is 2-11D1B, 3 PIN.

What is the mounting type for the TIM4450-4?

The mounting type is FLANGE MOUNT.

Does the TIM4450-4 support surface mounting?

Yes, the TIM4450-4 supports surface mounting.

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