DistyParts Icon
TIM1112-2 The Toshiba TIM1112-2 is an N-Channel RF Power JFET operating in depletion mode. It features a 15V minimum breakdown voltage and a maximum drain current of 2.6A.
Mfr Part #:

TIM1112-2

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TIM1112-2 is an N-Channel RF Power JFET operating in depletion mode. It features a 15V minimum breakdown voltage and a maximum drain current of 2.6A.
✓ Total Stock: 20 pcs
$ Price Range: $7.19

TIM1112-2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
20 pcs
On Request
20 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TIM1112-2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Configuration
Mounting Type
Number of Elements
Operating Mode
Package / Case
Transistor Type
View Similar Products (0)

TIM1112-2 Description

Short technical summary and product information.

The Toshiba TIM1112-2 is an RF Power JFET designed for high-frequency applications. This N-channel device operates in depletion mode and is constructed with a Gallium Arsenide element.

 

Key electrical specifications include a minimum breakdown voltage of 15V and a maximum drain current (ID) of 2.6A. It is designed for operation in the KU BAND frequency range.

 

The JFET is housed in a hermetically sealed, ceramic, metal-sealed cofired package with a flange mount style. The package is rectangular and features dual flat terminals.

 

This component is suitable for various RF power applications where reliable performance in the KU BAND is required.

TIM1112-2 Quick Information

Product Type: RF Power JFET
Canonical Name: TIM1112-2 RF Power JFET
Subcategory: RF Power

TIM1112-2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TIM1112-2 Estimated Pricing

Qty Low High
1+ $7.19 $7.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

TIM1112-2 Features

  • N-Channel RF Power JFET
  • 15V minimum breakdown voltage
  • 2.6A maximum drain current
  • KU BAND frequency operation
  • Gallium Arsenide element

TIM1112-2 Applications

  • Suitable for high-frequency RF power amplification.
  • Used in Ku band satellite communication systems.
  • Ideal for depletion-mode GaAs RF transistors.
  • Applicable in flange-mounted, ceramic-sealed RF modules.

TIM1112-2 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the TIM1112-2?

The minimum breakdown voltage is 15 V.

What is the maximum drain current for the TIM1112-2?

The maximum drain current (ID) is 2.6 A.

What frequency band does the TIM1112-2 operate in?

The TIM1112-2 operates in the KU BAND frequency.

What type of transistor is the TIM1112-2?

The TIM1112-2 is an RF Power JFET.

What is the package type for the TIM1112-2?

The TIM1112-2 is supplied in a hermetically sealed, ceramic, metal-sealed cofired rectangular package with a flange mount style.

Home

Categories