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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TIL111 is a general-purpose optocoupler consisting of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It is housed in a 6-pin dual in-line package (DIP6) and offers an isolation voltage of 5.3 kV.
Key electrical characteristics include a Collector-Emitter Voltage (Vceo) of 70V and a Collector-Base Voltage (Vcbo) of 70V. The device has a typical input forward voltage of 1.4V at 16mA and a maximum reverse leakage current of 10µA at 3.0V. The current transfer ratio (CTR) ranges from 100% to 300% at 10mA.
With a typical turn-on time of 5µs and a turn-off time of 1µs, the TIL111 is suitable for various applications. These include power supply regulators, digital logic inputs, microprocessor inputs, appliance sensor systems, and industrial controls.
The operating temperature range is -55°C to +100°C, and storage temperature is -55°C to +150°C. The component is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The TIL111 has a minimum insulation voltage of 5.3 kV.
The CTR is 100-300% at a forward current of 10 mA.
The operating temperature range is -55°C to +100°C.
The TIL111 is available in a DIP-6 through-hole package.
The collector-emitter breakdown voltage is 30 V minimum.
Typical turn-on time is 5 µs and typical turn-off time is 1 µs.