TH58TGT3V23BB8N The Toshiba TH58TGT3V23BB8N is a 1TB TLC BiCS3 NAND Flash memory component. It operates in Toggle Mode with a BGA152 package.
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TH58TGT3V23BB8N

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The Toshiba TH58TGT3V23BB8N is a 1TB TLC BiCS3 NAND Flash memory component. It operates in Toggle Mode with a BGA152 package.
✓ Total Stock: 90 pcs
$ Price Range: $1.28

TH58TGT3V23BB8N Available from 1 distributor

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TH58TGT3V23BB8N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TH58TGT3V23BB8N Description

Short technical summary and product information.

The Toshiba TH58TGT3V23BB8N is a 1TB NAND Flash memory chip utilizing TLC (Triple-Level Cell) technology and BiCS3 process. It is designed for high-density storage applications and features a BGA152 package.

 

This flash memory operates in synchronous Toggle Mode, supporting interface voltages of 3.3V (VCC) and 1.8V (VCCQ). It boasts a capacity of 1TB and is organized with 16 dies and 4 Chip Enable (CE) lines. The component has demonstrated sequential read speeds averaging 340.3 MB/s and sequential write speeds averaging 353.6 MB/s in testing.

 

Key specifications include its TLC flash cell type and BiCS3 manufacturing process. The BGA152 package is suitable for surface-mount applications. The Flash ID for this component is 98499AB37EF2. It is compatible with various controllers such as SM2258XT, SM2258(AD), SM2259XT, SM2259XT2, and YS9082HP.

 

This component is identified by its part number TH58TGT3V23BB8N. It is part of the broader category of NAND Flash memory, often used in solid-state drives (SSDs) and other storage solutions.

TH58TGT3V23BB8N Quick Information

Product Type: NAND Flash Memory
Canonical Name: Toshiba/东芝 TH58TGT3V23BB8N 1TB TLC BiCS3 NAND Flash Memory
Subcategory: NAND Flash

TH58TGT3V23BB8N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

TH58TGT3V23BB8N Estimated Pricing

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1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

TH58TGT3V23BB8N Features

  • 1TB TLC BiCS3 NAND Flash memory.
  • Synchronous Toggle Mode interface.
  • BGA152 package for surface mounting.
  • Supports 3.3V VCC and 1.8V VCCQ.
  • Average sequential speeds up to 353.6 MB/s.

TH58TGT3V23BB8N Applications

  • Ideal for solid-state drives (SSDs).
  • Suitable for high-density storage.
  • Used in embedded systems.
  • Applicable in data storage solutions.

TH58TGT3V23BB8N FAQs

6 frequently asked questions generated from this part’s specifications.
What is the capacity of the Toshiba TH58TGT3V23BB8N flash memory?

The Toshiba TH58TGT3V23BB8N flash memory has a capacity of 1TB.

What type of flash memory is the TH58TGT3V23BB8N?

The TH58TGT3V23BB8N is a TLC (Triple-Level Cell) NAND Flash memory.

What is the package type for the TH58TGT3V23BB8N?

The TH58TGT3V23BB8N comes in a BGA152 package.

What are the operating voltages for the TH58TGT3V23BB8N?

The TH58TGT3V23BB8N operates at 3.3V for VCC and 1.8V for VCCQ.

What is the sequential read speed of the TH58TGT3V23BB8N?

The average sequential read speed for the TH58TGT3V23BB8N is 340.3 MB/s.

What is the sequential write speed of the TH58TGT3V23BB8N?

The average sequential write speed for the TH58TGT3V23BB8N is 353.6 MB/s.

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