| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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90 pcs
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90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Toshiba TH58TGT3V23BB8N is a 1TB NAND Flash memory chip utilizing TLC (Triple-Level Cell) technology and BiCS3 process. It is designed for high-density storage applications and features a BGA152 package.
This flash memory operates in synchronous Toggle Mode, supporting interface voltages of 3.3V (VCC) and 1.8V (VCCQ). It boasts a capacity of 1TB and is organized with 16 dies and 4 Chip Enable (CE) lines. The component has demonstrated sequential read speeds averaging 340.3 MB/s and sequential write speeds averaging 353.6 MB/s in testing.
Key specifications include its TLC flash cell type and BiCS3 manufacturing process. The BGA152 package is suitable for surface-mount applications. The Flash ID for this component is 98499AB37EF2. It is compatible with various controllers such as SM2258XT, SM2258(AD), SM2259XT, SM2259XT2, and YS9082HP.
This component is identified by its part number TH58TGT3V23BB8N. It is part of the broader category of NAND Flash memory, often used in solid-state drives (SSDs) and other storage solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Toshiba TH58TGT3V23BB8N flash memory has a capacity of 1TB.
The TH58TGT3V23BB8N is a TLC (Triple-Level Cell) NAND Flash memory.
The TH58TGT3V23BB8N comes in a BGA152 package.
The TH58TGT3V23BB8N operates at 3.3V for VCC and 1.8V for VCCQ.
The average sequential read speed for the TH58TGT3V23BB8N is 340.3 MB/s.
The average sequential write speed for the TH58TGT3V23BB8N is 353.6 MB/s.