| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,751 pcs
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9751 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
9,751 pcs
|
9751 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Kioxia America TH58TFT2V23BA8J is a high-capacity NAND Flash Memory component designed for storage applications. It utilizes 3D TLC technology and a BICS3 process node, offering a total capacity of 512GB.
This flash memory chip operates using a Toggle Mode interface, supporting voltages of 3.3V for VCC and 3.3V/1.8V for VCCQ. It is housed in a BGA152 package, suitable for surface-mount applications. The chip features 8 dies and 4 CE (Chip Enable) lines, contributing to its performance.
Performance benchmarks indicate sequential read speeds up to 520.2 MB/s and sequential write speeds up to 429.4 MB/s. These speeds are indicative of its capabilities in data transfer operations. The component is identified by FLASH ID 984899B37A72.
This part is part of the broader category of memory components, specifically NAND flash memory, and is manufactured by Kioxia America, Inc.
| Qty | Low | High |
|---|---|---|
| 1+ | $9.40 | $9.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The TH58TFT2V23BA8J has a capacity of 512GB.
It uses 3D TLC NAND flash technology.
The TH58TFT2V23BA8J comes in a BGA152 package.
The VCC voltage is 3.3V, and the VCCQ voltage is 3.3V/1.8V.
The maximum sequential read speed is 520.2 MB/s.
The maximum sequential write speed is 429.4 MB/s.