| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,307 pcs
|
1307 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
1,307 pcs
|
1307 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
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The TH58NVG4S0HTA20 from Kioxia America, Inc. is a 16 Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). Organized as 2G x 8 bits, this device utilizes a parallel interface for data input and output.
Key electrical specifications include an operating voltage range of 2.7V to 3.6V, an access time of 25 ns, and a write cycle time of 25 ns. The memory supports various modes such as Read, Auto Page Program, and Auto Block Erase. It requires 8-bit ECC for every 512 bytes of data.
Packaged in a 48-TSOP I, the TH58NVG4S0HTA20 is suitable for surface mount applications. Its operating temperature range is 0°C to 70°C (TA). This high-density non-volatile memory is designed for applications like solid-state file storage, voice recording, and image file memory.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 16 Gbit.
The operating voltage is 2.7V to 3.6V.
It is available in a 48-TSOP I package and a 48-TFSOP (0.724", 18.40mm Width) package.
The operating temperature range is 0°C to 70°C (TA).
The access time is 25 ns.
The write cycle time is 25 ns.
Yes, 8 bit ECC for each 512Byte is required.