| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,238 pcs
|
5238 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
5,238 pcs
|
5238 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
1,205 pcs
|
1205 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba TH58NVG4S0FTAK0 is a high-density 16 Gigabit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). It is organized as (4096 + 232) bytes × 64 pages × 8192 blocks, featuring two 4328-byte static registers for efficient data transfer.
This component operates from a single 3.3V supply, with a voltage range of 2.7V to 3.6V. It is designed for a wide operating temperature range, from -40°C to 85°C. The TH58NVG4S0FTAK0 comes in a 48-terminal TSOP package, suitable for various electronic applications requiring reliable non-volatile storage.
Key specifications include a memory type of FLASH and a density of 16Gb. The device is designed for applications demanding significant data storage capacity and robust performance within a compact form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal operating voltage is 3.3V, with a minimum of 2.7V and a maximum of 3.6V.
The memory density is 16Gb (18,152,947,712 bits).
It comes in a 48-pin TSOP package.
The operating temperature range is -40°C to 85°C.
The memory is organized as (4096 + 232) bytes per page, 64 pages per block, and 8192 blocks.