| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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54,811 pcs
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54811 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Kioxia America, Inc. TH58NVG2S3HBAI6 is a high-reliability 4Gbit Single-Level Cell (SLC) NAND Flash memory integrated circuit. It utilizes a parallel interface for data transfer and is housed in a compact 63-BGA (9x11mm) surface-mount package.
Key electrical specifications include an operating voltage range of 2.7V to 3.6V and a fast write cycle time of 25ns for word or page operations. The device is designed to operate reliably across a wide temperature range, from -40°C to 85°C, making it suitable for demanding industrial environments.
Organized as 512M x 8 bits, this non-volatile memory offers robust performance and data retention characteristic of SLC NAND technology. Its design is well-suited for embedded systems, industrial automation, networking devices, and other applications requiring dependable storage solutions.
The TH58NVG2S3HBAI6 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. Its surface-mount package requires appropriate handling and soldering processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
NAND Flash (SLC).
4 Gbit.
2.7V to 3.6V.
-40°C to 85°C.
63-BGA (9x11 mm).
Parallel.
25 ns for word and page operations.