BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,446 pcs
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1446 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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363 pcs
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363 pcs | On Request | 1 | On Request | On Request | 1117+ | On Request | On Request |
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| SVHC Present |
The Toshiba TH58DVG5S0ETAK0 is a high-density 32Gb SLC NAND Flash Memory integrated circuit. Designed for reliable data storage, it operates within a wide temperature range of -40°C to 85°C and utilizes a supply voltage typically between 2.7V to 3.6V.
Key electrical characteristics include a typical first access time of 25µs, a program time of 0.3ms, and a block erase time of 2.5ms. The memory type is SLC NAND, known for its performance and endurance.
This component is available in TSOP I and P-TFBGA packages, suitable for various surface-mount applications. Its robust specifications make it a suitable choice for embedded systems and data storage solutions requiring dependable flash memory.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The density of the TH58DVG5S0ETAK0 is 32 Gb.
The operating temperature range for the TH58DVG5S0ETAK0 is -40°C to 85°C.
The typical program time is 0.3 ms and the typical block erase time is 2.5 ms.
The typical supply voltage for the TH58DVG5S0ETAK0 is 3.3 V.
The TH58DVG5S0ETAK0 is available in TSOP I 48-P-1220-0.50 and P-TFBGA63-0813-0.80AZ packages.