| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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191 pcs
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191 pcs | On Request | 1 | On Request | On Request | 2010 | On Request | On Request |
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| Technology |
The TriQuint Semiconductor TGF2023-01 is a discrete 1.25 mm GaN on SiC HEMT designed for high-frequency applications.
This device operates from DC to 18 GHz and features advanced field plate techniques for optimized performance at high drain bias conditions. It typically provides a nominal power gain of 15 dB and a saturated output power (Psat) greater than 38 dBm. The maximum power added efficiency (PAE) is 55%, making it suitable for high-efficiency applications.
The TGF2023-01 is built on TriQuint's proven 0.25um GaN production process. Key electrical characteristics include a typical drain voltage range of 28-40 V and a typical gate voltage of -3 V, with a quiescent drain current of 125 mA.
Primary applications include space, military, and broadband wireless systems. The chip dimensions are 0.82 x 0.66 x 0.10 mm.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.94 | $1.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The TGF2023-01 transistor has a nominal power gain of 15 dB.
The maximum power added efficiency (PAE) for the TGF2023-01 is 55%.
The TGF2023-01 typically provides a nominal saturated output power greater than 38 dBm.
The TGF2023-01 operates over a frequency range of DC to 18 GHz.
Typical bias conditions for the TGF2023-01 are Vd = 28 - 40 V, Idq = 125 mA, and Vg = -3 V.
The TGF2023-01 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TGF2023-01 is Level 1.