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TF412ST5G The On Semiconductor TF412ST5G is an N-Channel JFET with a 30V drain-to-source voltage and 10mA drain current. It is housed in a compact SOT-883 package.
Mfr Part #:

TF412ST5G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor TF412ST5G is an N-Channel JFET with a 30V drain-to-source voltage and 10mA drain current. It is housed in a compact SOT-883 package.
✓ Total Stock: 323,004 pcs
$ Price Range: $0.99

TF412ST5G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
321,204 pcs
On Request
321204 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,800 pcs
On Request
1800 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TF412ST5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current Drain (Id)
Drain to Source Voltage (Vdss)
FET Type
Halogen Free
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Voltage
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TF412ST5G Description

Short technical summary and product information.

The TF412ST5G from On Semiconductor is an N-Channel Junction Field-Effect Transistor (JFET) designed for low-frequency general-purpose amplification, impedance conversion, and infrared sensor applications.

 

This device features a maximum drain-to-source voltage (VDSX) of 30V and a maximum gate current (IG) of 10mA. The drain current (IDSS) ranges from 1.2mA to 3.0mA at 10V drain-to-source voltage and 0V gate-to-source voltage. Its forward transfer admittance (|yfs|) is typically between 3.0mS and 5.0mS at 1kHz.

 

The JFET operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 100mW. It is supplied in an ultrasmall SOT-883 (XDFN3) surface-mount package, facilitating miniaturization in end products.

 

The TF412ST5G is a Pb-Free and Halogen Free device, making it suitable for environmentally conscious designs.

TF412ST5G Quick Information

Product Type: JFET
Canonical Name: TF412ST5G N-Channel JFET
Subcategory: N-Channel JFET

TF412ST5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TF412ST5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

TF412ST5G Features

  • N-Channel JFET for low-frequency applications.
  • 30V drain-to-source voltage rating.
  • 10mA maximum drain current.
  • Compact SOT-883 (XDFN3) package.
  • Pb-Free and Halogen Free device.

TF412ST5G Applications

  • Low-level analog signal switching.
  • Small-signal amplification stages.
  • Low-power voltage-controlled resistor circuits.
  • General purpose JFET switching applications.

TF412ST5G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the TF412ST5G?

30 V.

What is the maximum continuous drain current?

10 mA.

What is the power dissipation rating?

100 mW.

What is the maximum junction temperature?

150°C.

What package does the TF412ST5G come in?

3-XFDFN, also known as SOT-883 (XDFN3) with dimensions 1x0.6mm.

What is the gate-source cutoff voltage range?

-0.18 to -1.5 V.

What is the input capacitance at 1 MHz?

4 pF typical.

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