| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,450 pcs
|
2450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The TEF6692AHN/V205 from NXP Semiconductors is a single Insulated Gate Bipolar Transistor (IGBT). This component is designed for various discrete semiconductor applications.
Key specifications include RoHS3 compliance, indicating adherence to environmental standards. The Moisture Sensitivity Level (MSL) is rated at 1 Unlimited, meaning it requires no special handling regarding moisture absorption. The REACH status is unaffected, suggesting compliance with relevant chemical regulations.
As a single IGBT, the TEF6692AHN/V205 is suitable for power switching and amplification tasks in electronic circuits. Its classification falls under discrete semiconductor products, specifically within the transistors category.
Further details regarding its specific electrical characteristics, operating conditions, and package type would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.69 | $1.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.
The REACH status is REACH Unaffected.