| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,668 pcs
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8668 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
94 pcs
|
94 pcs | On Request | 1 | On Request | On Request | 1413 | On Request | On Request |
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The Micron Technology TE28F256P33T95A is a 256-Mbit Parallel NOR Flash Memory designed for high-performance applications. It offers an initial access time of 95ns for the TSOP package and supports a 52MHz synchronous burst read mode with zero wait states.
This flash memory utilizes Multi-Level Cell Technology for high density at a low cost, featuring an asymmetrically-blocked architecture with four 32-KByte parameter blocks and 128-KByte main blocks. The device operates with a core and I/O voltage range of 2.3V to 3.6V. Key electrical characteristics include a standby current of 65uA (Typ) and a continuous synchronous read current of 21 mA (Typ) at 52 MHz.
Security features include one-time programmable registers, device identifier bits, user-programmable OTP bits, absolute write protection, power-transition lockout, and password access. The memory supports program and erase suspend operations with typical times of 25µs.
The TE28F256P33T95A is available in a 56-Lead TSOP package and operates within an industrial temperature range of -40°C to +85°C. It is JESD47E Compliant and manufactured using 65nm ETOX™ X process technology, offering a minimum of 100,000 erase cycles per block.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The core and I/O voltage range is 2.3V to 3.6V.
The device is available in 56-lead TSOP, 56-TFSOP, and 64-ball Easy BGA packages, all surface mount.
-40°C to +85°C.
256Mbit organized as 16M x 16.
Initial access time is 95ns (Easy BGA) or 105ns (TSOP). Asynchronous-page read is 25ns, synchronous burst read is 17ns.
Typical standby current is 65µA.
Minimum 100,000 erase cycles per block.