| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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The Intel TE28F128J3C150 is a StrataFlash Memory designed for mainstream performance, providing high density in a compact space. This memory component offers a 128-Mbit (16-Mbyte) density and utilizes reliable two-bit-per-cell storage technology.
Key electrical specifications include an initial access speed of 110 ns and asynchronous page-mode reads at 25 ns. It features a 32-byte write buffer and an effective programming time of 6.8 µs per byte. The operating temperature range is extended from -40℃ to +85℃, with a storage temperature range of -65℃ to +125℃. The device supports a wide signal voltage range from -2.0V to +5.0V.
Designed for flexibility, the TE28F128J3C150 is compatible with Flash Data Integrator (FDI) and Common Flash Interface (CFI). It includes security features like a 128-bit Protection Register and 64-bit Unique Device Identifier. The memory is organized into high-density symmetrical 128-Kbyte blocks.
This component comes in a 56TSOP package, suitable for surface mount applications. Its multi-level cell technology contributes to high density at a low cost-per-bit, making it a cost-effective solution for code and data storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum initial access speed is 110 ns for the 128-Mbit density.
The voltage on any signal pin is rated from -2.0 V to +5.0 V.
The extended temperature range is -40°C to +85°C.
It is supplied in a 56-lead TSOP (56TSOP) for surface-mount mounting.
The write buffer is 32 bytes.
The effective programming time is 6.8 µs per byte.