| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,774 pcs
|
1774 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Type | |
| Power Dissipation |
The Techcode TDM3478 is an N-channel trench MOSFET designed for power switching applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 54A at 25°C. The MOSFET exhibits a low on-resistance (Rds(on)) of 6mΩ when measured at 12A drain current and 10V gate-source voltage, contributing to efficient power handling.
With a gate threshold voltage (Vgs(th)) of 2.5V at 250uA and a maximum power dissipation of 2.08W at ambient temperature (Ta), the TDM3478 is suitable for various electronic designs. It is housed in a compact DFN 3x3 package, making it ideal for space-constrained applications. The component is classified as a RoHS3 compliant device with an MSL 1 rating.
This MOSFET is a reliable choice for engineers seeking efficient power management solutions. Its specifications make it suitable for use in power supplies, motor control, and other demanding electronic circuits where high current and low on-resistance are critical.
The drain-source voltage (Vds) of the TDM3478 MOSFET is 30V.
The continuous drain current (Id) for the TDM3478 MOSFET is 54A at 25°C.
The on-resistance (Rds(on)) of the TDM3478 MOSFET is 6mΩ at 12A drain current and 10V gate-source voltage.
The TDM3478 MOSFET comes in a DFN 3x3 package.
The gate threshold voltage (Vgsth) for the TDM3478 MOSFET is 2.5V at 250uA.