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TDM3412 The TDM3412 is an N-Channel MOSFET from Techcode Semicon. It features a 30V drain-source voltage and 18A continuous drain current.
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TDM3412

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Mfr Name: TECHCODE
TECHCODE
The TDM3412 is an N-Channel MOSFET from Techcode Semicon. It features a 30V drain-source voltage and 18A continuous drain current.
✓ Total Stock: 3,769 pcs

TDM3412 Available from 2 distributors

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Xingangxin ✓
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3,101 pcs
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3101 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
668 pcs
On Request
668 pcs On Request 1 On Request On Request 17+ On Request On Request
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TDM3412 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Gate Charge
Input Capacitance
Mounting Type
Number of Channels
Package / Case
Power Dissipation
Type
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TDM3412 Description

Short technical summary and product information.

The TDM3412 is an N-Channel MOSFET manufactured by Techcode Semicon, designed for various electronic applications. This component is configured as a Half-Bridge with two N-Channel MOSFETs.

 

Key electrical specifications include a maximum drain-source voltage of 30V and a continuous drain current of 18A. The on-resistance (RDS(on)) is typically 17.5mΩ at 4.5V gate-source voltage. It also has a gate threshold voltage of 2.5V and a power dissipation rating of 20W.

 

Capacitance values include input capacitance (Ciss) of 600pF, reverse transfer capacitance (Crss) of 22pF, and output capacitance (Coss) of 318pF. The gate charge (Qg) is 12nC at 10V.

 

The TDM3412 comes in a DFN-8-EP(3x3) package and is suitable for SMT assembly. Its Moisture Sensitivity Level (MSL) is 1, indicating unlimited shelf life under recommended conditions.

TDM3412 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: TDM3412 N-Channel Half-Bridge MOSFET
Subcategory: N-Channel

TDM3412 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TDM3412 Features

  • N-Channel Half-Bridge MOSFET configuration.
  • 30V maximum drain-source voltage.
  • 18A continuous drain current.
  • Low 17.5mΩ typical on-resistance.
  • DFN-8-EP(3x3) package for SMT assembly.

TDM3412 Applications

  • Suitable for power switching applications.
  • Ideal for half-bridge converter designs.
  • Used in DC-DC conversion circuits.
  • Applicable in motor control systems.

TDM3412 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the TDM3412?

The maximum drain-source voltage is 30V.

What package is the TDM3412 available in?

The TDM3412 is available in a DFN-8-EP(3x3mm) surface-mount package.

What is the continuous drain current rating?

The continuous drain current is 18A.

What is the typical on-resistance?

Typical on-resistance is 17.5mΩ at a gate-source voltage of 4.5V.

What is the gate charge of the TDM3412?

Gate charge is typically 12nC at 10V.

Is the TDM3412 a single or dual MOSFET?

The TDM3412 is a dual N-Channel MOSFET configured as a half-bridge.

What is the input capacitance of the TDM3412?

Input capacitance is typically 600pF.

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