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11,000 pcs
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11000 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| Tape & Reel |
The Microchip TC8220K6-G is a dual N-channel and P-channel enhancement mode MOSFET. It offers a drain-source breakdown voltage of 200V and a continuous drain current of 2.3A. The on-resistance is specified at 6 Ohms to 7 Ohms.
This MOSFET operates within a temperature range of -55°C to +150°C. It features a gate-source voltage range of ±10V and a gate-source threshold voltage of 1V. Key electrical parameters include a minimum forward transconductance of 400 Ms, with rise and fall times of 15ns, and typical turn-on and turn-off delay times of 10ns and 20ns respectively.
The TC8220K6-G is designed for surface mounting in a DFN-12 package and is supplied on a reel. The part is manufactured by Microchip Technology.
The drain-source breakdown voltage is 200V.
The continuous drain current is 2.3A.
The on-resistance is 6 Ohms to 7 Ohms.
The operating temperature range is -55°C to +150°C.
This MOSFET is in a DFN-12 package.
The part is supplied on a reel.