TC8220K6-G The Microchip Technology TC8220K6-G is a dual N-channel and P-channel enhancement mode MOSFET. It offers a 200V drain-source breakdown voltage and a low Rds On resistance.
Mfr Part #:

TC8220K6-G

Available from 4 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology TC8220K6-G is a dual N-channel and P-channel enhancement mode MOSFET. It offers a 200V drain-source breakdown voltage and a low Rds On resistance.
✓ Total Stock: 14,060 pcs
$ Price Range: $1.64

TC8220K6-G Available from 4 distributors

✓ Authorised
✓ Non-Authorised

TC8220K6-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Drain to Source Voltage (Vdss)
Input Capacitance (Ciss) (Max) @ Vds
Mounting Style
Mounting Type
Number of Channels
Operating Temperature
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

TC8220K6-G Description

Short technical summary and product information.

The Microchip Technology TC8220K6-G is a versatile MOSFET designed for various applications. It features a 200V drain-source breakdown voltage and a continuous drain current of 2.3A. The Rds On resistance is specified at 6 Ohms at 1A and 10V.

 

This MOSFET operates in enhancement mode and is configured with two N-channel and two P-channel transistors, providing flexibility in circuit design. It has a gate-source voltage rating of 10V and a gate-source threshold voltage of 1V.

 

The device is housed in a 12-DFN (4x4) surface-mount package, suitable for compact electronic designs. It operates within a temperature range of -55°C to 150°C.

 

Key electrical characteristics include an input capacitance of 56pF at 25V, a minimum forward transconductance of 400mS, and fast switching times with typical turn-on delay of 10ns and turn-off delay of 20ns.

TC8220K6-G Quick Information

Product Type: MOSFET
Canonical Name: Microchip Technology TC8220K6-G Dual N-Channel and P-Channel MOSFET
Subcategory: MOSFETs

TC8220K6-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TC8220K6-G Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

TC8220K6-G Features

  • Dual N-channel and P-channel MOSFETs.
  • 200V drain-source breakdown voltage.
  • Low Rds On resistance of 6 Ohm.
  • Surface mount 12-DFN package.
  • Wide operating temperature range.

TC8220K6-G Applications

  • Suitable for power switching applications.
  • Ideal for battery management circuits.
  • Used in portable electronic devices.
  • Applicable in power supply designs.

TC8220K6-G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 200V.

What is the continuous drain current?

The continuous drain current is 2.3A.

What is the Rds On resistance?

The Rds On resistance is 6 Ohm at 1A and 10V.

What is the gate-source threshold voltage?

The gate-source threshold voltage is 1V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package is this MOSFET in?

This MOSFET is in a 12-DFN (4x4) surface-mount package.

Is this RoHS compliant?

This product is RoHS3 Compliant.

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