| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Supertex TC8020K6-G is a six-pair N- and P-channel enhancement-mode MOSFET array designed for high voltage applications. It utilizes advanced vertical DMOS technology, providing features such as integrated gate-to-source resistors and Zener diode clamps for protection.
Key electrical specifications include a maximum drain-to-source voltage of 200V, a typical peak output current of +/-3.5A at 50V, and a low on-resistance of 8 Ohm at 1A and 10V. The input capacitance is 50pF at 25V, and the gate threshold voltage is a maximum of 2.4V at 1mA. The device is characterized by its low threshold, low on-resistance, low input and output capacitance, and fast switching speeds.
This MOSFET array is suitable for applications such as high voltage pulsers, amplifiers, buffers, piezoelectric transducer drivers, general purpose line drivers, and logic level interfaces. Its design is free from thermal runaway and thermally-induced secondary breakdown, characteristic of MOS structures.
The TC8020K6-G is supplied in a 56-VFQFN exposed pad package, designed for surface mounting. The operating temperature range is -55°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 200V.
The package is 56-VFQFN Exposed Pad, also known as 56-QFN (8x8), with surface-mount mounting.
The operating temperature range is -55°C to 150°C junction temperature.
Maximum on-resistance is 8Ω at a drain current of 1A and gate-source voltage of 10V.
Maximum input capacitance is 50pF at a drain-source voltage of 25V.
Maximum gate threshold voltage is 2.4V at a drain current of 1mA.
Typical peak output current is ±3.5A at 50V.