| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,063 pcs
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3063 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
2,774 pcs
|
2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Microchip Technology TC6320TG-G is a versatile N/P-Channel MOSFET designed for various applications. It offers a high drain-to-source voltage rating of 200V, making it suitable for power switching tasks.
Key electrical characteristics include a maximum on-resistance of 7 Ohms at 1A and 10V, and a gate threshold voltage of 2V at 1mA. The input capacitance is rated at a maximum of 110pF at 25V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a standard 8-SOIC package with a surface mount type, facilitating easy integration into PCB designs.
The device utilizes MOSFET (Metal Oxide) technology and is configured as N and P-Channel, providing flexibility for different circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction temperature).
MOSFET (Metal Oxide) technology.
It is an N and P-Channel complementary MOSFET array.
7 Ohm at 1A drain current and 10V gate drive.
110pF at 25V drain-source voltage.