| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,300 pcs
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4300 pcs | On Request | 1 | On Request | On Request | 1730+ | On Request | On Request |
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| Forward Voltage |
The Microchip TC6320K6-G is a complementary pair MOSFET array featuring both P-channel and N-channel transistors. This device is designed for surface mounting and comes in an 8-pin VDFN package.
Key electrical specifications include a maximum continuous drain current (Id) of 2A and a maximum drain-source voltage (Vds) of 200V. The channel mode is enhancement, and it has a typical forward voltage (Vf) of 1.8V. Each chip contains one element.
This MOSFET array is suitable for applications requiring complementary transistor configurations. Its VDFN package is designed for efficient heat dissipation and space-saving on printed circuit boards. The device is specified for a Moisture Sensitivity Level (MSL) of 1.
The maximum continuous drain current (Id) for the TC6320K6-G is 2A.
The maximum drain-source voltage (Vds) for the TC6320K6-G is 200V.
The TC6320K6-G MOSFET array features both P-Channel and N-Channel types.
The Microchip TC6320K6-G comes in an 8-pin VDFN package.
The Moisture Sensitivity Level (MSL) for the TC6320K6-G is 1 Unlimited.