| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Supertex TC6320 is a versatile MOSFET component featuring both N-channel and P-channel configurations within a single package. It is designed for high voltage pulser applications, offering a breakdown voltage of 200V and a low threshold voltage of 2V. The device exhibits an RDS(on) Max of 7Ω at 1A and 10V, with an input capacitance of 110pF at 25V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is available in an 8-lead SOIC package, suitable for surface mounting. The integrated gate-to-source resistors and gate-to-source Zener diode clamps enhance its suitability for demanding high voltage applications. The TC6320 also includes a rise time of 15ns maximum.
Key electrical characteristics include a 200V breakdown voltage and a 2V threshold voltage. The on-resistance is specified at a maximum of 7Ω under specific test conditions. The component's input capacitance is 110pF. With its dual N-channel and P-channel capabilities and robust design, the TC6320 is a suitable choice for various high-voltage switching and pulsing circuits.
200V.
2V.
7Ω at 1A and 10V gate drive.
110pF typical at 25V.
2 channels.
15ns maximum.
-55°C to 150°C.