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8,556 pcs
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8556 pcs | On Request | 1 | On Request | On Request | 15+16+Rohs | On Request | On Request |
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The Supertex TC6215TG-G is a high voltage, low threshold N-channel and P-channel MOSFET designed for various switching and amplifying applications. It features integrated back-to-back gate-source Zener diode clamps and guaranteed R DS(ON) ratings down to 4.0V gate drive, allowing direct interface with standard 5.0V CMOS logic.
This dual MOSFET utilizes an advanced vertical DMOS structure. Key electrical specifications include a drain-to-source breakdown voltage of 150V, a gate threshold voltage between 1V and 2V, and low on-resistance values of 4Ω for the N-channel and 7Ω for the P-channel.
The device operates across a wide temperature range from -55°C to +150°C. It is supplied in an 8-lead SOIC package, suitable for surface mounting.
Applications for the TC6215TG-G include high voltage pulsers, amplifiers, buffers, piezoelectric transducer drivers, general-purpose line drivers, and logic-level interfaces.
The drain-source breakdown voltage is 150V minimum.
The device comes in an SOIC-8 surface-mount package.
The operating and storage temperature range is -55°C to +150°C.
The gate threshold voltage is 1V to 2V.
The N-channel maximum RDS(on) is 4Ω, and the P-channel maximum is 7Ω.
The continuous drain current is 36A maximum.
The gate-source voltage is rated at ±20V.