| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,300 pcs
|
2300 pcs | On Request | 1 | On Request | On Request | 1709 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Drain to Source Voltage (Vdss) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Microchip Technology TC6215TG-G is a dual enhancement-mode MOSFET featuring both N-channel and P-channel transistors in a single 8-SOIC package. This device offers a high drain-to-source breakdown voltage of 150V and a low on-resistance of 4 Ohms at a gate drive of 10V. It is designed with integrated back-to-back gate-source Zener diode clamps, allowing direct drive from standard 5.0V CMOS logic.
With a gate threshold voltage ranging from 1V to 2V, the TC6215TG-G is suitable for low threshold applications. It boasts fast switching speeds, low input capacitance of 120pF, and is free from secondary breakdowns. The operating temperature range is -55°C to 150°C.
This dual MOSFET is surface-mount packaged in an 8-SOIC configuration. Its characteristics make it well-suited for applications such as high voltage pulsers, amplifiers, buffers, piezoelectric transducer drivers, general purpose line drivers, and logic level interfaces.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage (BVDSS) is 150V.
The maximum on-resistance (Rds On) is 4 Ohms at 2A and 10V gate drive.
The gate threshold voltage (VGS(th)) is between 1V and 2V.
The operating temperature range is -55°C to 150°C.
The TC6215TG-G is available in an 8-SOIC package.